Development of Pulsed TEM Equipped with Nitride Semiconductor Photocathode for High-Speed Observation and Material Nanofabrication

The development of pulsed electron sources is applied to microscopes or beam lithography and effective in expanding the functions such devices. laser photocathode can generate short electrons with high emittance, emittance be increased by changing cathode substrate from a metal compound semiconductor. Among substrates, nitride-based semiconductors negative affinity (NEA) have good advantages terms vacuum environment lifetime. In present study, we report gun that utilizes photoelectron emission NEA-InGaN excitation, purpose apply it material nanofabrication high-speed observation using transmission microscope (TEM) equipped it.